IEEE - Institute of Electrical and Electronics Engineers, Inc. - New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Ruiz, M. ; Michel, N. ; Calligaro, M. ; Robert, Y. ; Krakowski, M. ; Nikitichev, D.I. ; Cataluna, M.A. ; Livshits, D. ; Rafailov, E.U.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 170 - 171
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642658
Regular:

With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.

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