IEEE - Institute of Electrical and Electronics Engineers, Inc. - 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Fedorova, K.A. ; Cataluna, M.A. ; Krestnikov, I. ; Livshits, D. ; Rafailov, E.U.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 172 - 173
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642655
Regular:

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part... View More

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