IEEE - Institute of Electrical and Electronics Engineers, Inc. - Exciton-polariton laser diodes

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Schneider, C. ; Kim, N.Y. ; Rahimi-Iman, A. ; Nitsche, W.H. ; Lermer, M. ; Kamp, M. ; Reitzenstein, S. ; Worschech, L. ; Höfling, S. ; Yamamoto, Y. ; Forchel, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 201 - 202
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642642
Regular:

Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the... View More

Advertisement