IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lasing in GaAs 1−x Bi x /GaAs thin film cavity with low-temperature-dependent oscillation wavelength

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Tominaga, Y. ; Oe, K. ; Yoshimoto, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 205 - 206
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642640
Regular:

Lasing oscillation from GaAs1−xBix/GaAs thin film with Fabry-Perot cavity was performed for the first time by photo-pumping. The lasing emission peak energy decreased at a constant rate of... View More

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