IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monolithic Ge-on-Si lasers for integrated photonics

2010 7th IEEE International Conference on Group IV Photonics (GFP)

Author(s): Jifeng Liu ; Xiaochen Sun ; Camacho-Aguilera, R. ; Yan Cai ; Kimerling, L.C. ; Michel, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Beijing, China, China
Conference Date: 1 September 2010
Page(s): 1 - 3
ISBN (CD): 978-1-4244-6345-9
ISBN (Electronic): 978-1-4244-6346-6
ISBN (Paper): 978-1-4244-6344-2
DOI: 10.1109/GROUP4.2010.5643446
Regular:

We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs,... View More

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