IEEE - Institute of Electrical and Electronics Engineers, Inc. - A selective area metal bonding method for Si photonics light sources

2010 7th IEEE International Conference on Group IV Photonics (GFP)

Author(s): Tao Hong ; Yang Wang ; Hong-Yan Yu ; Song Yue ; Wei-Xi Chen ; Song Liang ; Zhi Li ; Jiao-Qing Pan ; Guang-Zhao Ran
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Beijing, China, China
Conference Date: 1 September 2010
Page(s): 13 - 15
ISBN (CD): 978-1-4244-6345-9
ISBN (Electronic): 978-1-4244-6346-6
ISBN (Paper): 978-1-4244-6344-2
DOI: 10.1109/GROUP4.2010.5643442
Regular:

A 1.55 μm hybrid InGaAsP-Si laser was fabricated by the selective area metal bonding method. Room temperature continuous lasing with a maximum output power of 0.45 mW is realized.

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