IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mechanical tensile strain engineering of Ge for gain achievement

2010 7th IEEE International Conference on Group IV Photonics (GFP)

Author(s): El Kurdi, M. ; de Kersauson, M. ; de Marcillac, W.D. ; Bertin, H. ; Martincic, E. ; Bosseboeuf, A. ; Beaudoin, G. ; Jakomin, R. ; Sagnes, I. ; Sauvage, S. ; Fishman, G. ; Boucaud, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Beijing, China, China
Conference Date: 1 September 2010
Page(s): 51 - 53
ISBN (CD): 978-1-4244-6345-9
ISBN (Electronic): 978-1-4244-6346-6
ISBN (Paper): 978-1-4244-6344-2
DOI: 10.1109/GROUP4.2010.5643431
Regular:

We show that the recombination energy of the direct band gap photoluminescence of germanium can be controlled by an external mechanical stress. The deformation is provided by an apparatus used for... View More

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