IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoluminescence from dislocations in silicon induced by irradiation of electron beams

2010 7th IEEE International Conference on Group IV Photonics (GFP)

Author(s): Luelue Xiang ; Dongsheng Li ; Lu Jin ; Deren Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Beijing, China, China
Conference Date: 1 September 2010
Page(s): 150 - 152
ISBN (CD): 978-1-4244-6345-9
ISBN (Electronic): 978-1-4244-6346-6
ISBN (Paper): 978-1-4244-6344-2
DOI: 10.1109/GROUP4.2010.5643396
Regular:

We induced dislocations controllably by using irradiation of electron beam. The dislocations induced by irradiation slipped though whole wafer and well-distributed at its slipping direction {111}... View More

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