IEEE - Institute of Electrical and Electronics Engineers, Inc. - Luminescence of Tm3+ in dislocation engineered silicon substrates

2010 7th IEEE International Conference on Group IV Photonics (GFP)

Author(s): Lourenço, M.A. ; Wong, L. ; Gwilliam, R.M. ; Homewood, K.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Beijing, China, China
Conference Date: 1 September 2010
Page(s): 159 - 161
ISBN (CD): 978-1-4244-6345-9
ISBN (Electronic): 978-1-4244-6346-6
ISBN (Paper): 978-1-4244-6344-2
DOI: 10.1109/GROUP4.2010.5643395
Regular:

Photoluminescence at 1.2 to1.4 µm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices... View More

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