IEEE - Institute of Electrical and Electronics Engineers, Inc. - Application of high power terahertz sources to nonlinear spectroscopy of direct bandgap semiconductors

2010 2nd International Workshop "Thz Radiation: Basic Research and Applications (TERA)

Author(s): Morandotti, R. ; Razzari, L. ; Blanchard, F. ; Su, F.H. ; Sharma, G. ; Ayesheshim, A. ; Cocker, T.L. ; Titova, L.V. ; Bandulet, H. ; Kieffer, J. ; Ozaki, T. ; Reid, M. ; Hegmann, F.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine, Ukraine
Conference Date: 12 September 2010
Page(s): 248 - 250
ISBN (CD): 978-1-4244-8294-8
ISBN (Electronic): 978-1-4244-8295-5
ISBN (Paper): 978-1-4244-8296-2
DOI: 10.1109/TERA.2010.5619929
Regular:

Nonlinear dynamics of free-carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using high power, few-cycle pulses. Techniques as Z-scan and THz-pump / THz-probe are... View More

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