IEEE - Institute of Electrical and Electronics Engineers, Inc. - Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): E V Anichenko ; E V Erofeev ; S V Ishutkin ; V A Kagadei ; K S Nosaeva
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 754 - 755
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632990
Regular:

Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is... View More

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