IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrically programmed tellurium based thin-film memory element

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): B S Kolosnitsin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 819 - 820
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632948
Regular:

Transition of thin film memory element based on tellurium in a metastable state with quasimetallic conductivity is followed by structural transformations, which leads to a charge ordering of... View More

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