IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of electron transport in resonant-tunneling heterostructures on a base of wide bandgap gallium nitride's combinations

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): V I Egorkin ; V V Kapaev ; K A Tsarik ; S S Shmelyov ; M N Zhuravlyov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 861 - 862
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632924
Regular:

Numerical method for calculation of electron transport in GaN/AlGaN resonant-tunneling heterostructures is developed. It has been shown with using this method that the external electric field... View More

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