IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of Schottky contacts on forward and reverse saturation currents

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): N A Torkhov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 850 - 851
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632882
Regular:

It has been found that the screening electric field El located at the periphery of the metal-semiconductor contact with Schottky barrier and penetrating to the contact, depends on... View More

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