IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of GaN surface morphology on characteristics of Al 0,3 Ga 0,7 N/GaN heterostructures created by molecular beam epitaxy

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): K A Tsarik ; V K Nevolin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 836 - 837
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632850
Regular:

The technique of forming III-N layers with low defects level is developed. It is based on method of molecular beam epitaxy with atomic force microscopy using. It is demonstrated that the structure... View More

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