IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN two-stage power amplifier of C-band

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): V Guljaev ; V Glazunov ; G Zykova ; J Mjakichev ; V Chaly
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 103 - 104
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632787
Regular:

A two-stage amplifier on AlGaN/GaN heterostructure transistors has been designed for the use within 5-7 GHz frequency range. Linear gain amounts to 20±1.0 dB, input reflection factor does not... View More

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