IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cathodoluminescent spectroscopy and electric properties of MODFETs of Al x Ga 1−x N/GaN at impact of proton irradiation 1.8 MeV

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): M M Bataiev ; L J Brillson
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 934 - 935
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632779
Regular:

The cathodoluminescent spectroscopy (CLS) in order to examine AlGaN/GaN modulation-doped field-effect transistors that display degraded source-drain current characteristics after 1.8-MeV proton... View More

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