IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nitride gallium high power integrated heterostructure FETs

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): Yu N Rakov ; N V Monchares ; T P Bobrova ; L V Schepina ; G F Uzelmann ; Yu B Mjakishev ; T K Bondareva ; A F Zazulnikov ; Yu N Sveshnikov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 101 - 102
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632774
Regular:

The heterostructures AlGaN/AlN/GaN, grown on sapphire substrates, the standard design of the integrated power HFET and the design with the additional field-plate, and its technology have been... View More

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