IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of resistance of low-noise amplifier based on GaN PHEMT, to input microwave power

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): N E Antonova ; V E Zemliakov ; A V Krutov ; A S Rebrov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 942 - 943
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632758
Regular:

Development and practical realization results of low noise amplifiers robust to input microwave power are presented. The measured parameters are shown.

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