IEEE - Institute of Electrical and Electronics Engineers, Inc. - NDC of diodes with tunnel and resonant-tunneling borders

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): E D Prokhorov ; O V Botsula
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 218 - 219
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632567
Regular:

The diodes, in which negative differential conductivity (NDC) arises at certain stresses between ohmic contacts owe to tunneling or resonant tunneling of electrons through lateral borders of the... View More

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