IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gann diodes on basis of variband semiconductors

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): I P Storozhenko ; Y V Arkusha ; E N Zhivotova
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 202 - 203
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632555
Regular:

The influence of spatial inhomogeneity of different physical parameters of variband semiconductors on origination of inconsistences in Gunn diodes is investigated. Presence of special effects in... View More

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