IEEE - Institute of Electrical and Electronics Engineers, Inc. - Standard technologies for microvawe semiconductor electronics based on III-nitrides

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): D M Krasovitskiy ; N I Katsavets ; S V Kokin ; A G Filaretov ; V P Chaliy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 741 - 742
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632544
Regular:

The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is... View More

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