IEEE - Institute of Electrical and Electronics Engineers, Inc. - Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): A E Belyaev ; V V Basanets ; N S Boltovets ; A V Zorenko ; R V Konakova ; N V Kolesnik ; Y Y Kudryk ; V V Milenin ; A B Ataubaeva
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 171 - 173
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632527
Regular:

The estimation of thermal limitations for pulse operation mode in the 8 mm-wave band of double-drift impact avalanche and transit-time (IMPATT) diodes with microwave power ≥20 W. It is shown... View More

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