IEEE - Institute of Electrical and Electronics Engineers, Inc. - Heterostructure P-I-N diodes

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)

Author(s): G I Ayzenshtat ; V G Bozhkov ; A Y Yushchenko ; E A Monastirev
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Sevastopol, Ukraine
Conference Date: 13 September 2010
Page(s): 169 - 170
ISBN (CD): 978-966-335-334-0
ISBN (Paper): 978-1-4244-7184-3
DOI: 10.1109/CRMICO.2010.5632526
Regular:

Heterostructure microwave beam lead p-i-n diodes are developed. Parameters of diodes were measured in a frequency range from 0.1 to 40 GHz. Insertion loss does not exceed 0.35 dB (I=10 mA). The... View More

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