IEEE - Institute of Electrical and Electronics Engineers, Inc. - Breaking the theoretical limits of silicon with innovative switch technologies

2010 IEEE International Symposium on Industrial Electronics (ISIE 2010)

Author(s): Araújo, S.V. ; Kazanbas, M. ; Zacharias, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Bari, Italy, Italy
Conference Date: 4 July 2010
Page(s): 676 - 681
ISBN (CD): 978-1-4244-6391-6
ISBN (Electronic): 978-1-4244-6392-3
ISBN (Paper): 978-1-4244-6390-9
DOI: 10.1109/ISIE.2010.5637608
Regular:

New semiconductors materials like silicon carbide (SiC) and gallium nitride (GaN) offer as major benefits the possibility of constructing high-voltage switching devices characterized by very low... View More

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