IEEE - Institute of Electrical and Electronics Engineers, Inc. - Base digital schemes on complementary bipolar transistors

2010 4th International Conference on Application of Information and Communication Technologies (AICT)

Author(s): Alimova, N.B. ; Aripova, Z.K. ; Toshmatov, S.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2010
Conference Location: Tashkent, Uzbekistan, Uzbekistan
Conference Date: 12 October 2010
Page(s): 1 - 3
ISBN (CD): 978-1-4244-6904-8
ISBN (Paper): 978-1-4244-6903-1
DOI: 10.1109/ICAICT.2010.5612004
Regular:

A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power... View More

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