IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on high quality InGaAsSb/AlGaAsSb MQWs grown by molecular beam epitaxy

2010 10th Russian-Chinese Symposium on Laser Physics and Laser Technologies (RCSLPLT) & 2010 Academic Symposium on Optoelectronics Technology (ASOT)

Author(s): Zhanguo Li ; Guojun Liu ; Minghui You ; Lin Li ; Mei Li ; Xin Gao ; Yong Gang Zou ; Xiaohua Wang ; Baoxue Bo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Harbin, China, China
Conference Date: 28 July 2010
Page(s): 36 - 38
ISBN (CD): 978-1-4244-5512-6
ISBN (Electronic): 978-1-4244-5513-3
ISBN (Paper): 978-1-4244-5511-9
DOI: 10.1109/RCSLPLT.2010.5615414
Regular:

In this work, the Type I InGaAsSb/AlGaAsSb multiple-quantum-wells (MQWs) has been grown by molecular beam epitaxy (MBE). The comprised five InGaAsSb quantum wells are embedded in AlGaAsSb... View More

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