IEEE - Institute of Electrical and Electronics Engineers, Inc. - Broad area semiconductor lasers with tailored gain

2010 10th Russian-Chinese Symposium on Laser Physics and Laser Technologies (RCSLPLT) & 2010 Academic Symposium on Optoelectronics Technology (ASOT)

Author(s): Zhongliang Qiao ; Siyu Zhang ; Xin Gao ; Zhanguo Li ; Peng Lu ; Hui Lie ; Yi Qu ; GuoJun Lui ; Baoxue Bo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Harbin, China, China
Conference Date: 28 July 2010
Page(s): 90 - 92
ISBN (CD): 978-1-4244-5512-6
ISBN (Electronic): 978-1-4244-5513-3
ISBN (Paper): 978-1-4244-5511-9
DOI: 10.1109/RCSLPLT.2010.5615398
Regular:

According to the principle of carrier diffusion, we fabricated an electric pattern high power single quantum well broad area semiconductor laser. The designed devices have special current... View More

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