IEEE - Institute of Electrical and Electronics Engineers, Inc. - High performance 850nm VCSELs with surface relief

2010 10th Russian-Chinese Symposium on Laser Physics and Laser Technologies (RCSLPLT) & 2010 Academic Symposium on Optoelectronics Technology (ASOT)

Author(s): Li, T. ; Hao, E.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Harbin, China, China
Conference Date: 28 July 2010
Page(s): 103 - 105
ISBN (CD): 978-1-4244-5512-6
ISBN (Electronic): 978-1-4244-5513-3
ISBN (Paper): 978-1-4244-5511-9
DOI: 10.1109/RCSLPLT.2010.5615392
Regular:

High performance 850nm VCSEL with surface-relief are fabricated. The maximum power of 10mW was achieved at injection current of 19mA for the device with 12µm oxide aperture. The electrical... View More

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