IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multi-photon resonant ionization of xenon in the vicinity of 440 nm

2010 10th Russian-Chinese Symposium on Laser Physics and Laser Technologies (RCSLPLT) & 2010 Academic Symposium on Optoelectronics Technology (ASOT)

Author(s): Zhenzhong Lu ; Deying Chen ; Rongwei Fan ; Yuanqin Xia ; Hongying Zhang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Harbin, China, China
Conference Date: 28 July 2010
Page(s): 116 - 119
ISBN (CD): 978-1-4244-5512-6
ISBN (Electronic): 978-1-4244-5513-3
ISBN (Paper): 978-1-4244-5511-9
DOI: 10.1109/RCSLPLT.2010.5615386
Regular:

By combining the pulse molecular beam technique and time of flight mass spectrum, the multiphoton resonance ionization of Xe in the vicinity of 440 nm is studied. The dependence of resonant... View More

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