IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thickness dependence of intense terahertz emission from InAs thin films

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Ishibasi, Y. ; Sasa, S. ; Maemoto, T. ; Inoue, M. ; Takeya, K. ; Tononuchi, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5613029
Regular:

A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as... View More

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