IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoconductivity of Pb 1−X Sn X Te(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Ryabova, L. ; Dobrovolsky, A. ; Chernichkin, V. ; Khokhlov, D. ; Dashevsky, Z. ; Kasiyan, V. ; Nicorici, A. ; Ganichev, S. ; Danilov, S. ; Bel'kov, V.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5613010
Regular:

Photoconductive response at wavelengths up to 500 µm has been detected in Pb1−XSnXTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of... View More

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