IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature dependence of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Jian Liang ; Weida Hu ; Jianzhen Pan ; Zhenhua Ye ; Lin, C. ; Xiaoshuang Chen ; Wei Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5613005
Regular:

A simultaneous-mode nonlinear resistance-voltage curve fitting procedure is applied in the analysis of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices at... View More

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