IEEE - Institute of Electrical and Electronics Engineers, Inc. - Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Drexler, C. ; Dyakonova, N. ; Schafberger, M. ; Karpierz, K. ; Karch, J. ; Videlier, H. ; Meziani, Y. ; Olbrich, P. ; Knap, W. ; Ganichev, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5613001
Regular:

We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes... View More

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