IEEE - Institute of Electrical and Electronics Engineers, Inc. - Terahertz responsivity enhancement of silicon CMOS transistor-based detectors using a current bias

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Boppel, S. ; Lisauskas, A. ; Voltolina, F. ; Bolívar, P.H. ; Roskos, H.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612994
Regular:

We report on a responsivity enhancement of silicon CMOS transistor-based detectors for terahertz radiation by the application of a source-to-drain bias current.

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