IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photodetection mechanisms in floating gate photoconductors with far-infrared quantum well intersubband transitions

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Ledwosinska, E. ; Szkopek, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612986
Regular:

We present two mechanisms of far-infrared detection using a GaAs/AlGaAs double-quantum well floating-gate heterostructure The conductance of a well region is modulated by photoionized electrons... View More

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