IEEE - Institute of Electrical and Electronics Engineers, Inc. - Room temperature imaging above one terahertz by field effect transistor as detector

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Nadar, S. ; Coquillat, D. ; Sakowicz, M. ; Videlier, H. ; Klimenko, O. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Seliuta, D. ; Kasalynas, I. ; Valušis, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612983
Regular:

GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300... View More

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