IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Sabatini, G. ; Palermo, C. ; Ziade, P. ; Laurent, T. ; Marinchio, H. ; Rodilla, H. ; Mateos, J. ; Gonzalez, T. ; Teissier, R. ; Varani, L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612857
Regular:

By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This... View More

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