IEEE - Institute of Electrical and Electronics Engineers, Inc. - Terahertz photomixing in strained silicon MODFET

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Meziani, Y.M. ; Moutaouakil, A.E. ; Velazquez, E. ; Diez, E. ; Fobelets, K. ; Otsuji, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612856
Regular:

Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal... View More

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