IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical properties of VO x bolometer thin films prepared by metal-organic decomposition

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Son, L.N. ; Tachiki, T. ; Uchida, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612822
Regular:

Well axis-oriented V2O5 thin films were fabricated by MOD. V2O5 films were reduced to VOx films under a temperature of 530°C and pressures of 1.2-3.0 Pa in O2. VOx films indicated an abrupt... View More

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