IEEE - Institute of Electrical and Electronics Engineers, Inc. - Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Dominijanni, D. ; Casini, R. ; Foglietti, V. ; Ortolani, M. ; Notargiacomo, A. ; Lanzieri, C. ; Peroni, M. ; Romanini, P. ; Giovine, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612783
Regular:

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical... View More

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