IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Sawayama, Y. ; Yasuo Doi ; Kurayama, R. ; Higurashi, E. ; Patrashin, M. ; Hosako, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612767
Regular:

We report a successful fabrication of a far-infrared blocked-impurity-band (BIB) detector. We achieve a clear boundary interface between an absorption layer and a blocking layer with a... View More

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