IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Giovine, E. ; Di Gaspare, A. ; Ortolani, M. ; Evangelisti, F. ; Foglietti, V. ; Cetronio, A. ; Dominijanni, D. ; Lanzieri, C. ; Peroni, M. ; Doria, A. ; Giovenale, E. ; Spassovsky, I. ; Gallerano, G.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612705
Regular:

The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here... View More

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