IEEE - Institute of Electrical and Electronics Engineers, Inc. - Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Dyakonova, N. ; Fatimy, A.E. ; Meziani, Y. ; Otsuji, T. ; Coquillat, D. ; Knap, W. ; Teppe, F. ; Vandenbrouk, S. ; Madjour, K. ; Theron, D. ; Gaquiere, C. ; Poisson, M.A. ; Delage, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612620
Regular:

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate... View More

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