IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurements of THz emission from nanometric-size transistors

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Nouvel, P. ; Torres, J. ; Marinchio, H. ; Laurent, T. ; Blin, S. ; Chusseau, L. ; Palermo, C. ; Varani, L. ; Shiktorov, P. ; Starikov, E. ; Gruzhinskis, V. ; Teppe, F. ; Coquillat, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612617
Regular:

Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200... View More

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