IEEE - Institute of Electrical and Electronics Engineers, Inc. - Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): Suzuki, S. ; Teranishi, A. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612616
Regular:

We obtained increase in oscillation frequency of resonant tunneling diodes (RTDs) using graded emitter and thin barriers for reduced transit and tunneling times. The fundamental oscillation... View More

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