IEEE - Institute of Electrical and Electronics Engineers, Inc. - Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems

2010 35th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2010)

Author(s): El Moutaouakil, A. ; Suemitsu, T. ; Otsuji, T. ; Coquillat, D. ; Knap, W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Rome, Italy, Italy
Conference Date: 5 September 2010
Page(s): 1 - 2
ISBN (CD): 978-1-4244-6656-6
ISBN (Electronic): 978-1-4244-6657-3
ISBN (Paper): 978-1-4244-6655-9
DOI: 10.1109/ICIMW.2010.5612598
Regular:

We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron-mobility transistors at 300K, demonstrating... View More

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