IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of stress(strain) on NMOSFET properties

2010 International Conference on Computer Application and System Modeling (ICCASM 2010)

Author(s): Xiang Hong ; Li ping Xu ; Ting dun Wen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2010
Conference Location: Taiyuan, China, China
Conference Date: 22 October 2010
Volume: 13
ISBN (Electronic): 978-1-4244-7237-6
ISBN (Paper): 978-1-4244-7235-2
DOI: 10.1109/ICCASM.2010.5622782
Regular:

In this paper, it is first time to introduce a new effect-Meso-transconductance Effect, applying a stress(strain) on the gate plane of NMOSFET along the axis direction. The stress causes a... View More

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