IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radiation effects on high-K dielectrics. Measurement technique and first results

2010 Argentine School Of Micro-Nanoelectronics, Technology and Applications (EAMTA)

Author(s): Salomone, L.S. ; Kasulin, A. ; Inza, M.G. ; Lipovetzky, J. ; Redin, E. ; Carbonetto, S. ; Campabadal, F. ; Faigón, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2010
Conference Location: Montevideo, Uruguay, Uruguay
Conference Date: 1 October 2010
Page(s): 66 - 70
ISBN (CD): 978-987-1620-14-2
ISBN (Paper): 978-1-4244-6747-1
Regular:

The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.

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