IEEE - Institute of Electrical and Electronics Engineers, Inc. - The design optimization for GaN-based betavoltaic microbattery

2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

Author(s): Zaijun Cheng ; Haisheng San ; Yanfei Li ; Xuyuan Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2010
Conference Location: Xiamen, China, China
Conference Date: 20 January 2010
Page(s): 582 - 586
ISBN (CD): 978-1-4244-6544-6
ISBN (Electronic): 978-1-4244-6545-3
ISBN (Paper): 978-1-4244-6543-9
DOI: 10.1109/NEMS.2010.5592469
Regular:

In this paper, we demonstrate a p-n junction betavoltaic microbattery which is based on the wide-band gap material of GaN. Ni-63 was used as the pure beta radiant source. By the Monte Carlo (MC)... View More

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